[G-6-1] BEOL-Transistor Technology with InGaZnO channel for High/Low Voltage Bridging I/Os

K. Kaneko¹, N. Inoue¹, H. Sunamura¹, S. Saito¹, N. Furutake¹, M. Narihiro¹, J. Kawahara¹, M. Hane¹, Y. Hayashi¹ (1.Renesas Electronics Corp. (Japan))

https://doi.org/10.7567/SSDM.2013.G-6-1