[G-6-1] BEOL-Transistor Technology with InGaZnO channel for High/Low Voltage Bridging I/Os

K. Kaneko¹、N. Inoue¹、H. Sunamura¹、S. Saito¹、N. Furutake¹、M. Narihiro¹、J. Kawahara¹、M. Hane¹、Y. Hayashi¹ (1.Renesas Electronics Corp. (Japan))

https://doi.org/10.7567/SSDM.2013.G-6-1