[J-2-1] Nanostructured GaN Transistors: Pushing the Limits of Linearity and Reliability

E. Matioli¹、B. Lu¹、D.S. Lee¹、F. Gao¹、T. Palacios¹ (1.Massachusetts Inst. of Tech. (USA))

https://doi.org/10.7567/SSDM.2013.J-2-1