[J-2-5] Demonstration of Enhancement-mode Operation in AlGaN/GaN MOS-HEMT on Si by utilizing ALD Al₂O₃ layer

J.J. Freedsman¹、T. Kubo¹、T. Egawa¹ (1.Nagoya Inst. of Tech. (Japan))

https://doi.org/10.7567/SSDM.2013.J-2-5