Suppression of Threshold Voltage Variation Due to Conduction Band Lowering Effect in Crystalline In-Ga-Zn-Oxide Thin Film Transistors

D. Matsubayashi; Y. Kobayashi; S. Matsuda; T. Obonai; N. Ishihara; S. Yamazaki

doi:https://doi.org/10.7567/SSDM.2013.J-3-4

[J-3-4] Suppression of Threshold Voltage Variation Due to Conduction Band Lowering Effect in Crystalline In-Ga-Zn-Oxide Thin Film Transistors

D. Matsubayashi¹、Y. Kobayashi¹、S. Matsuda¹、T. Obonai²、N. Ishihara¹、S. Yamazaki¹ (1.Semiconductor Energy Laboratory Co., Ltd.、2.Advanced Film Device Inc. (Japan))

https://doi.org/10.7567/SSDM.2013.J-3-4

2013 International Conference on Solid State Devices and Materials

[J-3-4] Suppression of Threshold Voltage Variation Due to Conduction Band Lowering Effect in Crystalline In-Ga-Zn-Oxide Thin Film Transistors