[J-3-5L] InGaSb/AlSb high hole mobility FETs on Si Substrate

H.W. Huang¹, P.C. Chiu¹, H.C. Ho¹, Y.M. Hsin¹, J.I. Chyi¹ (1.National Central Univ. (Taiwan))

https://doi.org/10.7567/SSDM.2013.J-3-5L