[J-3-5L] InGaSb/AlSb high hole mobility FETs on Si Substrate

H.W. Huang¹、P.C. Chiu¹、H.C. Ho¹、Y.M. Hsin¹、J.I. Chyi¹ (1.National Central Univ. (Taiwan))

https://doi.org/10.7567/SSDM.2013.J-3-5L