Effect of multiple carbon-doped/undoped GaN buffer layer on current collapse in AlGaN/GaN HEMTs

H.S. Kang; C.H. Won; D.S. Kim; S.M. Jeon; Y.J. Kim; Y.M. Kwon; S. Vodapally; J.H. Kim; J.H. Lee; Y.S. Lee

doi:https://doi.org/10.7567/SSDM.2013.J-4-3

[J-4-3] Effect of multiple carbon-doped/undoped GaN buffer layer on current collapse in AlGaN/GaN HEMTs

H.S. Kang¹、C.H. Won¹、D.S. Kim¹、S.M. Jeon¹、Y.J. Kim¹、Y.M. Kwon¹、S. Vodapally¹、J.H. Kim¹、J.H. Lee¹、Y.S. Lee¹ (1.Kyungpook National Univ.、2.Samsung Electronics Corp. Ltd. (Korea))

https://doi.org/10.7567/SSDM.2013.J-4-3

2013 International Conference on Solid State Devices and Materials

[J-4-3] Effect of multiple carbon-doped/undoped GaN buffer layer on current collapse in AlGaN/GaN HEMTs