[J-4-3] Effect of multiple carbon-doped/undoped GaN buffer layer on current collapse in AlGaN/GaN HEMTs

H.S. Kang¹, C.H. Won¹, D.S. Kim¹, S.M. Jeon¹, Y.J. Kim¹, Y.M. Kwon¹, S. Vodapally¹, J.H. Kim¹, J.H. Lee¹, Y.S. Lee¹ (1.Kyungpook National Univ., 2.Samsung Electronics Corp. Ltd. (Korea))

https://doi.org/10.7567/SSDM.2013.J-4-3