OCVD Characteristics of 4H-SiC PiN Diode with Carbon Implantation

A. Tanaka; K. Nakayama; K. Asano; T. Miyazawa; H. Tsuchida

doi:https://doi.org/10.7567/SSDM.2013.J-5-3

2013 International Conference on Solid State Devices and Materials

2013年9月24日〜 2013年9月27日
Hilton Fukuoka Sea Hawk, Fukuoka, Japan

[J-5-3] OCVD Characteristics of 4H-SiC PiN Diode with Carbon Implantation

A. Tanaka¹、K. Nakayama¹、K. Asano¹、T. Miyazawa²、H. Tsuchida² (1.Kansai Electric Power Co., Inc.、2.Central Res. Inst. of Electric Power Industry (Japan))

https://doi.org/10.7567/SSDM.2013.J-5-3

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