OCVD Characteristics of 4H-SiC PiN Diode with Carbon Implantation

A. Tanaka; K. Nakayama; K. Asano; T. Miyazawa; H. Tsuchida

doi:https://doi.org/10.7567/SSDM.2013.J-5-3

2013 International Conference on Solid State Devices and Materials

Sep 24, 2013 - Sep 27, 2013
Hilton Fukuoka Sea Hawk, Fukuoka, Japan

[J-5-3] OCVD Characteristics of 4H-SiC PiN Diode with Carbon Implantation

A. Tanaka¹, K. Nakayama¹, K. Asano¹, T. Miyazawa², H. Tsuchida² (1.Kansai Electric Power Co., Inc., 2.Central Res. Inst. of Electric Power Industry (Japan))

https://doi.org/10.7567/SSDM.2013.J-5-3

▲