Recent developments in GaN HEMTs and MMICs for high power electronics

P. Waltereit; W. Bronner; P. Brückner; M. Dammann; R. Reiner; S. Müller; J. Kühn; M. Mußer; R. Quay; M. Mikulla; O. Ambacher

doi:https://doi.org/10.7567/SSDM.2013.J-6-1

[J-6-1] Recent developments in GaN HEMTs and MMICs for high power electronics

P. Waltereit¹, W. Bronner¹, P. Brückner¹, M. Dammann¹, R. Reiner¹, S. Müller¹, J. Kühn¹, M. Mußer¹, R. Quay¹, M. Mikulla¹, O. Ambacher¹ (1.Fraunhofer Inst. for Applied Solid State Physics (Germany))

https://doi.org/10.7567/SSDM.2013.J-6-1

2013 International Conference on Solid State Devices and Materials

[J-6-1] Recent developments in GaN HEMTs and MMICs for high power electronics