[J-6-4] GaN Schottky Barrier Diodes with TiN Electrode for High Efficiency Microwave Power Rectification

A. Kishi¹, Y. Itai¹, T. Shiraishi¹, K. Fukui¹, Q. Liu¹, Y. Ohno², L. Li¹, J. Ao¹ (1.The Univ. of Tokushima, 2.e-Device Inc. (Japan))

https://doi.org/10.7567/SSDM.2013.J-6-4