[J-6-4] GaN Schottky Barrier Diodes with TiN Electrode for High Efficiency Microwave Power Rectification

A. Kishi¹、Y. Itai¹、T. Shiraishi¹、K. Fukui¹、Q. Liu¹、Y. Ohno²、L. Li¹、J. Ao¹ (1.The Univ. of Tokushima、2.e-Device Inc. (Japan))

https://doi.org/10.7567/SSDM.2013.J-6-4