The Japan Society of Applied Physics

[J-8-1] High-Frequency Characteristics of InGaAs Quantum-Well MOSFETs

D.H. Kim1,2, T.W. Kim1, R. Hill1, C.Y. Kang1, C. Hobbs1, P.D. Kirsch1, W. Maszara2, J.A. del Alamo3 (1.SEMATECH, 2.GLOBALFOUNDRIES, 3.MIT (USA))

https://doi.org/10.7567/SSDM.2013.J-8-1