[J-8-3] Effective AlN-passivation for Improving ALD-Al₂O₃/GaAs Interface in MOS Structures Using MOCVD

T. Aoki¹、N. Fukuhara¹、T. Osada¹、H. Sazawa¹、M. Hata¹、T. Inoue¹ (1.Sumitomo Chemical Co., Ltd. (Japan))

https://doi.org/10.7567/SSDM.2013.J-8-3