High Speed Waveguide Integrated Lateral P-I-N Ge on Si Photodiode with very Low Dark Current

L. Virot; L. Vivien; J.M. Hartmann; Y. Bogumilowicz; J.M. Fedeli; D. Marris Morini; E. Cassan; C. Baudot; F. Boeuf

doi:https://doi.org/10.7567/SSDM.2013.K-1-3

[K-1-3] High Speed Waveguide Integrated Lateral P-I-N Ge on Si Photodiode with very Low Dark Current

L. Virot^1,2,3、L. Vivien¹、J.M. Hartmann²、Y. Bogumilowicz²、J.M. Fedeli²、D. Marris Morini¹、E. Cassan¹、C. Baudot³、F. Boeuf³ (1.Institut d'Electronique Fondamentale、2.CEA-Leti、3.STMicroelectronics (France))

https://doi.org/10.7567/SSDM.2013.K-1-3

2013 International Conference on Solid State Devices and Materials

[K-1-3] High Speed Waveguide Integrated Lateral P-I-N Ge on Si Photodiode with very Low Dark Current