[K-1-4] Dark Current Reduction for GeSn p-i-n Photodetectors using Low-Temperature Si Passivation

W. Wang¹、Y. Dong¹、G. Han¹、P. Guo¹、X. Gong¹、X. Xu¹、Q. Zhou¹、L. Wang¹、Z. Xu²、W.K. Loke²、S.F. Yoon²、Y.C. Yeo¹ (1.National Uni. of Singapore、2.Nanyang Technological Univ. (Singapore))

https://doi.org/10.7567/SSDM.2013.K-1-4