[K-2-6] Trap Analysis of InGaN-based Blue Light Emitting Diodes using Current-Transient Methodology

G. Kim¹、E. Park¹、J.H. Kim¹、J.H. Bae¹、D.H. Kang²、B.G. Park¹ (1.Seoul National Univ.、2.Samsung Electronics, Corp., Ltd. (Korea))

https://doi.org/10.7567/SSDM.2013.K-2-6