[K-2-6] Trap Analysis of InGaN-based Blue Light Emitting Diodes using Current-Transient Methodology

G. Kim¹, E. Park¹, J.H. Kim¹, J.H. Bae¹, D.H. Kang², B.G. Park¹ (1.Seoul National Univ., 2.Samsung Electronics, Corp., Ltd. (Korea))

https://doi.org/10.7567/SSDM.2013.K-2-6