[M-3-4] Characterization of a Basal-Plane Dislocation in 4H-SiC by X-Ray Three-Dimensional Topography and Transmission Electron Microscopy

R. Tanuma¹、D. Mori²、H. Tsuchida¹ (1.Central Res. Inst. of Electric Power Industry、2.Fuji Electric Co., Ltd. (Japan))

https://doi.org/10.7567/SSDM.2013.M-3-4