Observation of Deep Levels and Their Hole Capture Behavior in p-type 4H-SiC Epilayers with and without Electron Irradiation

M. Kato; K. Yoshihara; M. Ichimura; T. Hatayama; T. Ohshima

doi:https://doi.org/10.7567/SSDM.2013.M-3-5

[M-3-5] Observation of Deep Levels and Their Hole Capture Behavior in p-type 4H-SiC Epilayers with and without Electron Irradiation

M. Kato¹、K. Yoshihara¹、M. Ichimura¹、T. Hatayama²、T. Ohshima³ (1.Nagoya Inst. of Tech.、2.Nara Inst. of Sci. & Tech.、3.Japan Atomic Energy Agency (Japan))

https://doi.org/10.7567/SSDM.2013.M-3-5

2013 International Conference on Solid State Devices and Materials

[M-3-5] Observation of Deep Levels and Their Hole Capture Behavior in p-type 4H-SiC Epilayers with and without Electron Irradiation