Observation of Deep Levels and Their Hole Capture Behavior in p-type 4H-SiC Epilayers with and without Electron Irradiation

M. Kato; K. Yoshihara; M. Ichimura; T. Hatayama; T. Ohshima

doi:https://doi.org/10.7567/SSDM.2013.M-3-5

[M-3-5] Observation of Deep Levels and Their Hole Capture Behavior in p-type 4H-SiC Epilayers with and without Electron Irradiation

M. Kato¹, K. Yoshihara¹, M. Ichimura¹, T. Hatayama², T. Ohshima³ (1.Nagoya Inst. of Tech., 2.Nara Inst. of Sci. & Tech., 3.Japan Atomic Energy Agency (Japan))

https://doi.org/10.7567/SSDM.2013.M-3-5

2013 International Conference on Solid State Devices and Materials

[M-3-5] Observation of Deep Levels and Their Hole Capture Behavior in p-type 4H-SiC Epilayers with and without Electron Irradiation