The Japan Society of Applied Physics

[M-5-4] Fabrication of Magnetic Tunnel Junctions with Amorphous CoFeSiB Free Layer for Highly Sensitive Magnetic Sensor Devices

K. Fujiwara1, D. Kato1, M. Oogane1, T. Nishikawa2, H. Naganuma1, Y. Ando1 (1.Tohoku Univ., 2.KONICA MINOLTA (Japan))

https://doi.org/10.7567/SSDM.2013.M-5-4