[M-5-4] Fabrication of Magnetic Tunnel Junctions with Amorphous CoFeSiB Free Layer for Highly Sensitive Magnetic Sensor Devices

K. Fujiwara¹, D. Kato¹, M. Oogane¹, T. Nishikawa², H. Naganuma¹, Y. Ando¹ (1.Tohoku Univ., 2.KONICA MINOLTA (Japan))

https://doi.org/10.7567/SSDM.2013.M-5-4