[M-7-4] Crystalline In-Ga-Zn-O FET-based Configuration Memory for Multi-Context Field-Programmable Gate Array Realizing Fine-Grained Power Gating

M. Kozuma¹, Y. Okamoto¹, T. Nakagawa¹, T. Aoki¹, M. Ikeda¹, T. Osada¹, Y. Kurokawa¹, T. Ikeda¹, N. Yamade¹, Y. Okazaki¹, H. Miyairi¹, M. Fujita², J. Koyama¹, S. Yamazaki¹ (1.Semiconductor Energy Laboratory Co., Ltd., 2.Univ. of Tokyo (Japan))

https://doi.org/10.7567/SSDM.2013.M-7-4