[M-7-4] Crystalline In-Ga-Zn-O FET-based Configuration Memory for Multi-Context Field-Programmable Gate Array Realizing Fine-Grained Power Gating

M. Kozuma¹、Y. Okamoto¹、T. Nakagawa¹、T. Aoki¹、M. Ikeda¹、T. Osada¹、Y. Kurokawa¹、T. Ikeda¹、N. Yamade¹、Y. Okazaki¹、H. Miyairi¹、M. Fujita²、J. Koyama¹、S. Yamazaki¹ (1.Semiconductor Energy Laboratory Co., Ltd.、2.Univ. of Tokyo (Japan))

https://doi.org/10.7567/SSDM.2013.M-7-4