[N-8-5L] Surface-Activated-Bonding Based InGaP-on-Si Double Junction Cells

N. Shigekawa^1,2、M. Morimoto¹、S. Nishida¹、J. Liang^1,2 (1.Osaka City Univ.、2.JST-CREST (Japan))

https://doi.org/10.7567/SSDM.2013.N-8-5L