[PS-1-12] Novel Sn-assisted Nitridation of Ge/HfO₂ Interface and Improved Electrical Properties of This MOS Capacitor

M. Zhao¹、R.R. Liang¹、J. Wang¹、J. Xu¹ (1.Tsinghua Univ. (China))

https://doi.org/10.7567/SSDM.2013.PS-1-12