Reduction of Schottky Barrier Height for n-type Ge Contact by using Sn Electrode

2013 International Conference on Solid State Devices and Materials

Sep 24, 2013 - Sep 27, 2013
Hilton Fukuoka Sea Hawk, Fukuoka, Japan

A. Suzuki¹, S. Asaba¹, J. Yokoi¹, O. Nakatsuka¹, M. Kurosawa^1,2, K. Kato¹, M. Sakashita¹, N. Taoka¹, S. Zaima¹ (1.Nagoya Univ., 2.JSPS (Japan))