[PS-1-13] Reduction of Schottky Barrier Height for n-type Ge Contact by using Sn Electrode

A. Suzuki¹、S. Asaba¹、J. Yokoi¹、O. Nakatsuka¹、M. Kurosawa^1,2、K. Kato¹、M. Sakashita¹、N. Taoka¹、S. Zaima¹ (1.Nagoya Univ.、2.JSPS (Japan))

https://doi.org/10.7567/SSDM.2013.PS-1-13