Residual Defects in Low-dose Arsenic Implanted Si after High-temperature Rapid Thermal Annealing: Their Behavior and Influence on CCD Image Sensors

A. Sagara; A. Uedono; N. Oshima; R. Suzuki; S. Shibata

doi:https://doi.org/10.7567/SSDM.2013.PS-1-14L

[PS-1-14L] Residual Defects in Low-dose Arsenic Implanted Si after High-temperature Rapid Thermal Annealing: Their Behavior and Influence on CCD Image Sensors

A. Sagara¹、A. Uedono²、N. Oshima³、R. Suzuki³、S. Shibata¹ (1.Panasonic Corp.、2.Univ. of Tsukuba、3.National Inst. of Advanced Indus. Sci. and Tech. (Japan))

https://doi.org/10.7567/SSDM.2013.PS-1-14L

2013 International Conference on Solid State Devices and Materials

[PS-1-14L] Residual Defects in Low-dose Arsenic Implanted Si after High-temperature Rapid Thermal Annealing: Their Behavior and Influence on CCD Image Sensors