[PS-1-14L] Residual Defects in Low-dose Arsenic Implanted Si after High-temperature Rapid Thermal Annealing: Their Behavior and Influence on CCD Image Sensors

A. Sagara¹, A. Uedono², N. Oshima³, R. Suzuki³, S. Shibata¹ (1.Panasonic Corp., 2.Univ. of Tsukuba, 3.National Inst. of Advanced Indus. Sci. and Tech. (Japan))

https://doi.org/10.7567/SSDM.2013.PS-1-14L