[PS-1-4] Study of the interfacial SiO₂ scavenging in HfO₂/SiO₂/Si stacks through the ultra-high vacuum annealing

X. Li¹、T. Yajima¹、T. Nishimura¹、K. Nagashio¹、A. Toriumi¹ (1.Univ. of Tokyo (Japan))

https://doi.org/10.7567/SSDM.2013.PS-1-4