The Japan Society of Applied Physics

[PS-1-6] Mechanism of Low-Temperature Activation of B in Si by Soft X-ray Irradiation

A. Heya1, T. Fukuoka1, N. Matsuo1, K. Kanda2, T. Noguchi3 (1.Univ.of Hyogo, 2.LASTI, Univ.of Hyogo, 3.Univ.of the Ryukyus (Japan))

https://doi.org/10.7567/SSDM.2013.PS-1-6