Properties of perpendicular-anisotropy magnetic tunnel junctions prepared by different MTJ etching process

S. Miura; H. Honjo; K. Tokutome; N. Kasai; S. Ikeda; T. Endoh; H. Ohno

doi:https://doi.org/10.7567/SSDM.2013.PS-12-11

2013 International Conference on Solid State Devices and Materials

2013年9月24日〜 2013年9月27日
Hilton Fukuoka Sea Hawk, Fukuoka, Japan

[PS-12-11] Properties of perpendicular-anisotropy magnetic tunnel junctions prepared by different MTJ etching process

S. Miura¹、H. Honjo¹、K. Tokutome¹、N. Kasai²、S. Ikeda^2,3、T. Endoh^2,3,4、H. Ohno^2,3 (1.NEC Corp.、2.CSIS Tohoku Univ.、3.Tohoku Univ.、4.Tohoku Univ. (Japan))

https://doi.org/10.7567/SSDM.2013.PS-12-11

▲