[PS-12-11] Properties of perpendicular-anisotropy magnetic tunnel junctions prepared by different MTJ etching process

S. Miura¹, H. Honjo¹, K. Tokutome¹, N. Kasai², S. Ikeda^2,3, T. Endoh^2,3,4, H. Ohno^2,3 (1.NEC Corp., 2.CSIS Tohoku Univ., 3.Tohoku Univ., 4.Tohoku Univ. (Japan))

https://doi.org/10.7567/SSDM.2013.PS-12-11