Correlation between the intensities of differential conductance curves and the spin accumulation signals in Si for CoFe/MgO/SOI devices

M. Ishikawa; H. Sugiyama; T. Inokuchi; T. Tanamoto; K. Hamaya; N. Tezuka; Y. Saito

doi:https://doi.org/10.7567/SSDM.2013.PS-12-2

[PS-12-2] Correlation between the intensities of differential conductance curves and the spin accumulation signals in Si for CoFe/MgO/SOI devices

M. Ishikawa¹, H. Sugiyama¹, T. Inokuchi¹, T. Tanamoto¹, K. Hamaya², N. Tezuka³, Y. Saito¹ (1.Corporate Research & Development Center, Toshiba Corp., 2.Kyushu Univ., 3.Tohoku Univ. (Japan))

https://doi.org/10.7567/SSDM.2013.PS-12-2

2013 International Conference on Solid State Devices and Materials

[PS-12-2] Correlation between the intensities of differential conductance curves and the spin accumulation signals in Si for CoFe/MgO/SOI devices