As and Al Activation in SiC Wafer by Atmospheric Thermal Plasma Jet Annealing

2013 International Conference on Solid State Devices and Materials

Sep 24, 2013 - Sep 27, 2013
Hilton Fukuoka Sea Hawk, Fukuoka, Japan

H. Hanafusa¹, R. Ashihara¹, K. Maruyama¹, S. Koyanagi¹, S. Hayashi¹, H. Murakami¹, S. Higashi¹ (1.Hiroshima Univ. (Japan))