Activation of Silicon Implanted with Dopant Atoms by Microwave Heating

T. Sameshima; T. Nakamura; S. Yoshidomi; M. Hasumi; T. Ishii; Y. Inouchi; M. Naito; T. Mizuno

doi:https://doi.org/10.7567/SSDM.2013.PS-15-1

[PS-15-1] Activation of Silicon Implanted with Dopant Atoms by Microwave Heating

T. Sameshima¹, T. Nakamura¹, S. Yoshidomi¹, M. Hasumi¹, T. Ishii¹, Y. Inouchi², M. Naito², T. Mizuno³ (1.Tokyo Univ. of Agr. And Tech., 2.Nissin Ion Equipment Co., Ltd., 3.Kanagawa Univ. (Japan))

https://doi.org/10.7567/SSDM.2013.PS-15-1

2013 International Conference on Solid State Devices and Materials

[PS-15-1] Activation of Silicon Implanted with Dopant Atoms by Microwave Heating