Luminescence from SiO2 by Helium Ion Microscopy without any Damage Characterized by TEM-EELS

S. Ogawa; T. Iijima; R. Sugie; N. Kawasaki; Y. Otsuka

doi:https://doi.org/10.7567/SSDM.2013.PS-2-6

2013 International Conference on Solid State Devices and Materials

Sep 24, 2013 - Sep 27, 2013
Hilton Fukuoka Sea Hawk, Fukuoka, Japan

[PS-2-6] Luminescence from SiO2 by Helium Ion Microscopy without any Damage Characterized by TEM-EELS

S. Ogawa¹, T. Iijima¹, R. Sugie², N. Kawasaki², Y. Otsuka² (1.Advanced Industrial Science and Technology (AIST), 2.Toray Research Center, Inc. (Japan))

https://doi.org/10.7567/SSDM.2013.PS-2-6

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