[PS-2-7] Stress Field and Defect Evaluation with Shallow Trench Isolation Structure after Transistor Fabrication Processing by Raman and Cathodoluminescence Spectroscopies
M. Kodera1, N. Tsuchiya1, S. Kakinuma2, N. Naka2
(1.Toshiba Corp., 2.Horiba, Ltd. (Japan))
https://doi.org/10.7567/SSDM.2013.PS-2-7
