[PS-2-7] Stress Field and Defect Evaluation with Shallow Trench Isolation Structure after Transistor Fabrication Processing by Raman and Cathodoluminescence Spectroscopies

M. Kodera¹、N. Tsuchiya¹、S. Kakinuma²、N. Naka² (1.Toshiba Corp.、2.Horiba, Ltd. (Japan))

https://doi.org/10.7567/SSDM.2013.PS-2-7