The Japan Society of Applied Physics

[PS-3-1] Chemical Analysis of Multi-Step Deposited and Two-Step (Ultraviolet Ozone cum Rapid Thermal) Annealed Sub-1-nm EOT HfO2/TiN Gate Stack for High-k Last Integration

K.S. Yew1、D.S. Ang1、L.J. Tang2、J.S. Pan3 (1.Nanyang Tech. Univ.、2.Inst. of Microelectronics, A∗STAR、3.Institute of Materials Research and Eng., A∗STAR (Singapore))

https://doi.org/10.7567/SSDM.2013.PS-3-1