[PS-3-3] Effects of HfO₂ and Lanthanum Capping Layer Thickness on the Narrow Width Behavior of Gate First High-K and Metal Gate NMOS Transistors

S.S. Naresh¹、N.R. Mohapatra¹、P.K. Duhan² (1.IIT-Gandhinagar、2.IIT-Bombay (India))

https://doi.org/10.7567/SSDM.2013.PS-3-3