The Japan Society of Applied Physics

[PS-3-4] Correlation between 1/f Noise Parameters and Random Telegraph Noise in 28-nm High-k/Metal Gate pMOSFETs with Embedded SiGe Source/Drain

S.C. Tsai1, S.L. Wu2, J.F. Chen1, K.S. Tsai2, T.H. Kao1, C.W. Yang3, C.G. Chen3, K.Y. Lo3, O.B. Cheng3, Y.K. Fang1, S.J. Chang1 (1.National Cheng Kung Univ., 2.Cheng Shiu Univ., 3.United Microelectronics Corp. (Taiwan))

https://doi.org/10.7567/SSDM.2013.PS-3-4