Correlation between 1/f Noise Parameters and Random Telegraph Noise in 28-nm High-k/Metal Gate pMOSFETs with Embedded SiGe Source/Drain

S.C. Tsai; S.L. Wu; J.F. Chen; K.S. Tsai; T.H. Kao; C.W. Yang; C.G. Chen; K.Y. Lo; O.B. Cheng; Y.K. Fang; S.J. Chang

doi:https://doi.org/10.7567/SSDM.2013.PS-3-4

[PS-3-4] Correlation between 1/f Noise Parameters and Random Telegraph Noise in 28-nm High-k/Metal Gate pMOSFETs with Embedded SiGe Source/Drain

S.C. Tsai¹、S.L. Wu²、J.F. Chen¹、K.S. Tsai²、T.H. Kao¹、C.W. Yang³、C.G. Chen³、K.Y. Lo³、O.B. Cheng³、Y.K. Fang¹、S.J. Chang¹ (1.National Cheng Kung Univ.、2.Cheng Shiu Univ.、3.United Microelectronics Corp. (Taiwan))

https://doi.org/10.7567/SSDM.2013.PS-3-4

2013 International Conference on Solid State Devices and Materials

[PS-3-4] Correlation between 1/f Noise Parameters and Random Telegraph Noise in 28-nm High-k/Metal Gate pMOSFETs with Embedded SiGe Source/Drain