[PS-3-4] Correlation between 1/f Noise Parameters and Random Telegraph Noise in 28-nm High-k/Metal Gate pMOSFETs with Embedded SiGe Source/Drain

S.C. Tsai¹, S.L. Wu², J.F. Chen¹, K.S. Tsai², T.H. Kao¹, C.W. Yang³, C.G. Chen³, K.Y. Lo³, O.B. Cheng³, Y.K. Fang¹, S.J. Chang¹ (1.National Cheng Kung Univ., 2.Cheng Shiu Univ., 3.United Microelectronics Corp. (Taiwan))

https://doi.org/10.7567/SSDM.2013.PS-3-4