[PS-3-7] The Trade-off between STI Stress and Gate Resistance in RF MOSFETs Design for High Frequency Performance and RF Noise

C.Y. Ku¹、K.L. Yeh¹、J.C. Guo¹ (1.National Chiao-Tung Univ. (Taiwan))

https://doi.org/10.7567/SSDM.2013.PS-3-7