Ultra-high LRS Nonlinearity and high speed in HfOX Based Complementary Resistive Switch with Ti electrode for Vertical RRAM

Y.S. Chen; P.S. Chen; H.Y. Lee; K.H. Tsai; T.Y. Wu; F. Chen; M.J. Tsai

doi:https://doi.org/10.7567/SSDM.2013.PS-4-1

[PS-4-1] Ultra-high LRS Nonlinearity and high speed in HfOX Based Complementary Resistive Switch with Ti electrode for Vertical RRAM

Y.S. Chen¹, P.S. Chen², H.Y. Lee¹, K.H. Tsai¹, T.Y. Wu¹, F. Chen¹, M.J. Tsai¹ (1.Indus. Tech. Res. Inst., 2.MingHsin Univ. of Sci. and Tech. (Taiwan))

https://doi.org/10.7567/SSDM.2013.PS-4-1

2013 International Conference on Solid State Devices and Materials

[PS-4-1] Ultra-high LRS Nonlinearity and high speed in HfOX Based Complementary Resistive Switch with Ti electrode for Vertical RRAM