[PS-6-1] Fully Recessed Schottky Barrier Diodes with a Digital Etching on AlGaN/GaN Heterostructures

N. Jeon¹、W. Choi¹、H. Ryu¹、H.Y. Cha²、K.S. Seo¹ (1.Seoul National Univ.、2.Hongik Univ. (Korea))

https://doi.org/10.7567/SSDM.2013.PS-6-1